Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film

• DOI: 10.1143/jjap.44.l1301
• Publication Date: 2005-10-18T10:19:06Z
• Authors: Min Gyu Kim; Sun Man Kim; Eun Jip Choi; Seung Eon Moon; Jonghyurk Park; Hyoung Chan Kim; Bae Ho Park; Myoung Jae Lee; Sunae Seo; David H. Seo; Seung Eun Ahn; In Kyeong Yoo
• Keywords: Non-blocking I/O; Bistability; Resistive touchscreen; High-κ dielectric

We have measured the DC resistance R ( T ) and AC dielectric constant ε (ω) for bistable high- low- states of NiO thin film. The state shows thermally activated Debye relaxation (ω). In state, exhibits a metallic temperature dependence (300 K)/ (5 K)=1.6. value is drastically different from that we interpret it in terms free-carrier Drude response. plasma frequency ω p 2 estimated to be 1.2×10 9 /cm 3 .