Ge/Ni–InGaAs Solid-State Reaction for Contact Resistance Reduction on n+ In0.53Ga0.47As

• DOI: 10.1143/jjap.51.02bf06
• Publication Date: 2012-02-23T06:38:28Z
• Authors: Hua Xin Guo; Eugene Yu Jin Kong; Xingui Zhang; Yee-Chia Yeo
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 530; 01 natural sciences

We investigate a solid state reaction between Ge and Ni–InGaAs on n+ In0.53Ga0.47As and its effects on the contact resistance of Ni-based contacts on InGaAs. This reaction was performed by isochronous annealing of Ge on Ni–InGaAs at temperatures ranging from 400 to 600 °C in N2 ambient. It was found that a regrown InGaAs layer rich in Ge was formed below the metal contact. Compared with Ni–InGaAs contact, more than 60% reduction in contact resistance on Si-implanted n-In0.53Ga0.47As was achieved after annealing at 600 °C. This contact structure was characterized by secondary ion mass spectroscopy, high resolution transmission electron microscopy, X-ray diffraction, and scanning electron microscopy.