Circuit reliability

• DOI: 10.1145/2429384.2429431
• Publication Date: 2013-01-22T15:29:29Z
• Authors: Jianxin Fang; Saket Gupta; Sanjay V. Kumar; Sravan K. Marella; Vivek Mishra; Pingqiang Zhou; Sachin S. Sapatnekar
• Keywords: Electromigration; Negative-bias temperature instability; Circuit reliability; Dielectric strength

In the period of extreme CMOS scaling, reliability issues are becoming a critical problem. These problems include related to device reliability, in form bias temperature instability, hot carrier injection, time-dependent dielectric breakdown gate oxides, as well interconnect concerns such electromigration and TSV stress 3D integrated circuits. This tutorial surveys these effects, discusses methods for mitigating them at all levels design.