(Invited) Direct Bonding Energy in Anhydrous Atmosphere

• DOI: 10.1149/05007.0003ecst
• Publication Date: 2013-03-19T20:08:26Z
• Authors: Frank Fournel; Léonardo Continni; Christophe Morales; Jeremy Da Fonseca; H. Moriceau; Chloé Martin Cocher; François Rieutord; Alexandre Barthelemy; Ionut Radu
• Keywords: Direct bonding; Bonding in solids; Anodic bonding; Anhydrous; Thermocompression bonding

Direct bonding energy is an important parameter for direct applications as well mechanism elaboration. Thanks to its simplicity simple result interpretation, double cantilever beam (DCB) under prescribed displacement the most used technique measure energy. But, shown also in this study, measurement of Si/SiO2 or SiO2/SiO2 standard humid atmosphere greatly impacted by water stress corrosion. To prevent effect, energies have been evaluated anhydrous with less than 0.2ppm nitrogen. After setup and methodology description without corrosion influence, global classical wafer curves versus post-bonding annealing temperature are revisited. Moreover, using various surface treatments prior bonding, behavior according can drastically change example plasma activation treatment. But contrary, silicon-silicon hydrophobic seems not atmosphere. Such results will be presented discussed.