(Invited) Brain-like Synapse Thin-Film Transistors Using Oxide Semiconductor Channel and Solid Electrolytic Gate Insulator

• DOI: 10.1149/07901.0183ecst
• Publication Date: 2017-05-12T20:20:17Z
• Authors: Sung-Min Yoon; Eom-Ji Kim; Yeo-Myeong Kim; Ji Young Oh

We proposed a synapse thin film transistors with top-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and Li-incorporated polypropylene carbonate (Li:PPC) gate insulator. The physical electrical properties the PPC were investigated for use as electrolytic insulator TFTs. Synaptic behaviors including paired-pulse facilitation (PPF) operations successfully confirmed in fabricated TFTs, which output drain currents effectively modulated various input pulse conditions owing to electrostatic coupling between carriers IGZO lithium ions PPC.