Formation of Boron-Carbon Nanosheets and Bilayers in Boron-Doped Diamond: Origin of Metallicity and Superconductivity

• DOI: 10.1186/s11671-015-1215-6
• Publication Date: 2016-01-12T00:10:53Z
• Authors: S. N. Polyakov; V. N. Denisov; B. N. Mavrin; A. N. Kirichenko; M. S Kuznetsov; S. Yu Martyushov; S. A. Terentiev; V. D. Blank
• Keywords: Materials Science(all); Nano Express; 02 engineering and technology; Condensed Matter Physics; 0210 nano-technology

The insufficient data on a structure of the boron-doped diamond (BDD) has frustrated efforts to fully understand fascinating electronic properties this material and how they evolve with doping.We have employed X-ray diffraction Raman scattering for detailed study large-sized BDD single crystals.We demonstrate formation boron-carbon (B-C) nanosheets bilayers in increasing boron concentration.An incorporation two atoms unit cell plays key role B-C bilayer formation.Evidence these which are parallel {111} planes is provided by observation high-order, super-lattice reflections Laue patterns.B-C minimize strain energy affect BDD.A new shallow acceptor level associated at ~37 meV spin-orbit splitting valence band ~6 observed scattering.We identified that superconducting transitions occur (111) surfaces only.We believe origin Mott two-dimensional (2D) misfit layer model crystal structure, based data, proposed confirmed density functional theoretical calculation.