Preparation of II-VI group semiconductor nanowire arrays by dc electrochemical deposition in porous aluminum oxide templates

• DOI: 10.1351/pac200072010127
• Publication Date: 2007-10-14T17:48:23Z
• Authors: Dongsheng Xu; Dapeng Chen; Yajie Xu; Xuesong Shi; Guolin Guo; Linlin Gui; Youqi Tang
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract II-VI group compound semiconductors such as CdS, CdSe, and CdTe nanowire arrays have been prepared by direct current electrodeposition in porous anodic aluminum oxide template from nonaqueous electrolyte. SEM and TEM results show that these nanowires have a highly anisotropic structure of aligned nanowires with diameters of 15-200 nm, which are consistent with the diameters of the templates used. Electron diffraction and HREM investigations demonstrate that the crystalline structures of these nanowires are uniform hexagonal single crystal. This approach can be used to fabricate single crystal nanowire arrays of a wide range of semiconductors and other materials.