Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

• DOI: 10.1364/aop.10.000246
• Publication Date: 2018-02-16T15:23:33Z
• Authors: Yuji Zhao; Houqiang Fu; George T. Wang; Shuji Nakamura
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

Nonpolar and semipolar III-nitride-based blue green light-emitting diodes (LEDs) have been extensively investigated as potential replacements for current polar c-plane LEDs. High-power low-efficiency-droop LEDs demonstrated on nonpolar planes III-nitride due to the advantages of eliminated or reduced polarization-related electric field homoepitaxial growth. Semipolar (202¯1) (202¯1¯) contributed bridging "green gap" (low efficiency in spectral region) by incorporating high indium compositions, reducing polarization effects, suppressing defects. Other properties, such low thermal droop, narrow linewidth, small wavelength shift, polarized emission, also reported In this paper we review theoretical background, device performance, material physical mechanisms semiconductors associated The latest progress topics including green-gap, three-dimensional nanostructures is detailed. Future challenges, solutions, applications will be covered.