High Efficiency GaN-based Light Emitting Diodes with Embedded Air Voids/SiO2 Nanomasks

• DOI: 10.1364/cleo_at.2012.jth2a.68
• Publication Date: 2013-04-05T11:29:15Z
• Authors: Ching-Hsueh Chiu; Chien-Chung Lin; Hau-Vei Han; Da-Wei Lin; Yan-Hao Chen; Che-Yu Liu; Yu-Pin Lan; Hao-Chung Kuo; Tien-Chang Lu; Shing-Chung Wang
• Keywords: Wide-bandgap semiconductor

We fabricated high efficiency LEDs with embedded micro-scale air voids and SiO2 nanomask exhibit smaller reverse-bias current great enhancement of the light output (65% at 20mA) compared conventional LEDs.