Site-controlled crystalline growth of InN on GaN substrate and its photoluminscence
Wide-bandgap semiconductor
DOI:
10.1364/cleo_at.2016.jth2a.85
Publication Date:
2016-05-31T17:05:56Z
AUTHORS (6)
ABSTRACT
We report a site-controlled growth of InN on GaN substrate. Crystalline micropillars were selectively grown from the hexagonal V-pits surface. The mechanism and photoluminescent property will be discussed.
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