High-speed 940 nm Ge-VCSEL with an Over 15 GHz Modulation Bandwidth at 85 °C

• DOI: 10.1364/cleo_at.2024.jtu2a.27
• Publication Date: 2024-09-05T16:31:49Z
• Authors: Yun-Cheng Yang; Zeyu Wan; Chih-Chuan Chiu; Wei-Hsin Chen; Guei-Ting Hsu; Markus Feifel; David Lackner; Guangrui(Maggie) Xia; Chao-Hsin Wu

This achievement marks a major milestone, establishing a dedicated pathway for epitaxy and fabrication of high-speed Ge-VCSELs. This technology offers extensive insights into epitaxial processes, advancing the field of VCSEL development.