Static and Dynamic Stark Tuning of the Silicon Vacancy in Silicon Carbide

• DOI: 10.1364/cleo_qels.2020.ftu3d.1
• Publication Date: 2020-09-15T16:05:30Z
• Authors: Alexander D. White; Daniil M. Lukin; Melissa A. Guidry; Rahul Trivedi; Naoya Morioka; Charles Babin; Florian Kaiser; Jawad Ul-Hassan; Nguyen Tien Son; Takeshi Ohshima; Praful Vasireddy; Mamdouh Nasr; Emilio Nanni; Jörg Wrachtrup; Jelena Vučković
• Keywords: Wide-bandgap semiconductor

We present the DC Stark tuning of single Silicon Vacancies in SiC. demonstrate static across 200 GHz, exceeding inhomogenous broadening, and dynamic on timescales shorter than optical decay rate.