III-As Pillar Arrays by Metal-Assisted Chemical Etching for Photonic Applications
02 engineering and technology
0210 nano-technology
DOI:
10.1364/cleo_si.2013.cth1j.3
Publication Date:
2013-06-26T11:19:17Z
AUTHORS (8)
ABSTRACT
Ordered arrays of GaAs/InGaAs micro and nanopillars are formed by metal-assisted chemical etching (MacEtch). The dependence of morphology and etch rate upon temperature, etchant composition, and doping concentration are explored and optical characteristics are discussed.
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