Recent progress in GaN-based Vertical-Cavity Surface-Emitting Lasers Having Dielectric Distributed Bragg Reflectors

• DOI: 10.1364/cleo_si.2018.stu4q.2
• Publication Date: 2018-05-08T10:18:51Z
• Authors: Hiroshi Nakajima; Jugo Mitomo; Kentaro Fujii; Masayuki Tanaka; Masamichi Ito; Maho Ohara; Noriko Kobayashi; Hideki Watanabe; Tatsushi Hamaguchi; Rintaro Koda; Hironobu Narui
• Keywords: 0211 other engineering and technologies; 02 engineering and technology

The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of GaN-based VCSELs with a newly proposed cavity structure incorporating an atomically smooth curved mirror, is overviewed.