High Q Integrated Photonic Microresonators on 3C SiC-on-Insulator Platform
Wafer Bonding
Chemical Mechanical Planarization
Direct bonding
Q factor
DOI:
10.1364/cleo_si.2018.sw4a.2
Publication Date:
2018-05-08T10:19:23Z
AUTHORS (5)
ABSTRACT
We report for the first time fabrication of high-Q SiC resonators on a 3C SiC-on-insulator platform (with no undercutting) formed using direct wafer bonding. demonstrate Q 42,000 20 µm radius microdonut resonator with great potential higher Qs by chemical-mechanical polishing.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (0)
CITATIONS (2)
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....