Temperature dependent implantation of As-Isoelectronic Impurity in GaN Micro and Nanostructures

• DOI: 10.1364/cleo_si.2024.sm2l.5
• Publication Date: 2024-09-05T18:46:36Z
• Authors: Aadil Waseem; Clarence Chan; Xihang Wu; Yujie Liu; Yifan Shen; Manos Kapritsos; Theodore B Norris; Xiuling Li
• Keywords: Wide-bandgap semiconductor

To enhance solar photo absorption of III-N semiconductors, we demonstrate Arsenic implantation at elevated temperatures, improving doping activation and reducing crystal damage.