Gallium Phosphide Microresonator Frequency Combs

• DOI: 10.1364/fio.2018.fth3c.6
• Publication Date: 2018-10-09T13:08:44Z
• Authors: Dalziel. J. Wilson; Simon Hönl; Katharina Schneider; Miles Anderson; Tobias J. Kippenberg; Paul Seidler
• Keywords: Gallium phosphide; Indium phosphide

We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity (~10−17 m2/W) yields THz at 1550 nm with 3-mW power threshold and >100-nm bandwidth.