Accurate measurements of second-order nonlinear optical coefficients of 6H and 4H silicon carbide

• DOI: 10.1364/josab.26.001892
• Publication Date: 2009-09-14T21:16:59Z
• Authors: Hiroaki Sato; Makoto Abe; Ichiro Shoji; Jun Suda; Takashi Kondo
• Keywords: 02 engineering and technology; 0210 nano-technology

The second-order nonlinear optical coefficients of 4H-SiC and 6H-SiC have been measured by use two second-harmonic generation methods, the rotational Maker-fringe wedge techniques, at fundamental wavelength 1.064 μm. Measurements on high-quality (0001) (112¯0) plane samples as well rigorous analyses taking into account multiple-reflection effects allowed us to accurately determine magnitudes coefficients. obtained values are d31=6.7 pm/V, d15=6.5 d33=−12.5 pm/V for 6H-SiC; d31=6.5 d15=6.7 d33=−11.7 4H-SiC.