Accurate measurements of second-order nonlinear optical coefficients of 6H and 4H silicon carbide

• DOI: 10.1364/josab.26.001892
• Publication Date: 2009-09-14T21:16:59Z
• Authors: Hiroaki Sato; Makoto Abe; Ichiro Shoji; Jun Suda; Takashi Kondo
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences

The second-order nonlinear optical coefficients of 4H-SiC and 6H-SiC have been measured by use of two second-harmonic generation methods, the rotational Maker-fringe and wedge techniques, at the fundamental wavelength of 1.064 μm. Measurements on high-quality (0001) and (112¯0) plane samples as well as rigorous analyses taking into account the multiple-reflection effects allowed us to accurately determine the magnitudes of the nonlinear optical coefficients. The obtained values are d31=6.7 pm/V, d15=6.5 pm/V, and d33=−12.5 pm/V for 6H-SiC; and d31=6.5 pm/V, d15=6.7 pm/V, and d33=−11.7 pm/V for 4H-SiC.