Modeling of plasmon modes at the indium antimonide–black phosphorus interface

• DOI: 10.1364/josab.551916
• Publication Date: 2025-04-10T12:00:16Z
• Authors: M. Umair; A. Ghaffar; Majeed A. S. Alka...; Y. Khan; M. Amir Ali
• Keywords: Indium antimonide; Black Phosphorus; Interface (matter); Antimonide

In this study, numerical models of surface plasmon polaritons at the indium antimonide (InSb)–black phosphorus (BP) planar interface are analyzed to explore the influence of carrier density, temperature, and the number of BP layers on the optical properties, specifically the effective mode index, phase velocity, and normalized propagation constant, along with σac and σzz conductivities. The numerical results reveal a significant dependence of these properties on the physical parameters, where the effective mode index increases with frequency but decreases by increasing carrier density and BP layers, highlighting enhanced light confinement. Conversely, phase velocity decreases under similar conditions, highlighting strong wave localization. Temperature-induced variations highlight the tunability of the interface for different operating conditions. Furthermore, the normalized propagation constant exhibits a direct dependency on frequency and material parameters, emphasizing the potential of this heterostructure for dynamic tuning in optoelectronic and photonic applications. Overall, these findings underscore the feasibility of utilizing the InSb–BP interface in advanced, frequency-selective, and temperature-sensitive optical devices.