Electrically pumped hybrid AlGaInAs-silicon evanescent laser

• DOI: 10.1364/oe.14.009203
• Publication Date: 2006-10-02T20:14:53Z
• Authors: Alexander W. Fang; Hyundai Park; Oded Cohen; Richard Jones; Mario J. Paniccia; John E. Bowers
• Keywords: Hybrid silicon laser; Waveguide; Wafer Bonding

An electrically pumped light source on silicon is a key element needed for photonic integrated circuits silicon. Here we report an AlGaInAs-silicon evanescent laser architecture where the cavity defined solely by waveguide and needs no critical alignment to III-V active material during fabrication via wafer bonding. This runs continuous-wave (c.w.) with threshold of 65 mA, maximum output power 1.8 mW differential quantum efficiency 12.7 % operating temperature 40 degrees C. approach allows 100's lasers be fabricated in one bonding step, making it suitable high volume, low-cost, integration. By varying dimensions composition layer, this can extended fabricate other devices such as optical amplifiers, modulators photo-detectors.