Zero-bias 40Gbit/s germanium waveguide photodetector on silicon

• DOI: 10.1364/oe.20.001096
• Publication Date: 2012-01-05T11:18:52Z
• Authors: Laurent Vivien; Andreas Polzer; Delphine Marris-M...; Johann Osmond; Jean Michel Hartmann; Paul Crozat; Eric Cassan; Christophe Kopp; Horst Zimmermann; Jean Marc Fédéli
• Keywords: Optics and Photonics; Silicon; Germanium; 0103 physical sciences; Electronics; Microscopy, Atomic Force; 01 natural sciences

We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.