High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier

• DOI: 10.1364/oe.20.018145
• Publication Date: 2012-07-23T18:43:10Z
• Authors: Huapu Pan; Solomon Assefa; William M. J. Green; Daniel M. Kuchta; Clint L. Schow; Alexander V. Ryly...; Benjamin G. Lee; Christian W. Baks; Steven M. Shank; Yurii A. Vlasov
• Keywords: Waveguide; Optical power; Nanophotonics

The performance of a receiver based on CMOS amplifier circuit designed with 90nm ground rules wire-bonded to waveguide germanium photodetector is characterized at data rates up 40Gbps. Both chips were fabricated through the IBM Silicon Integrated Nanophotonics process specialty photonics-enabled SOI wafers. At rate 28Gbps which relevant new generation optical interconnects, sensitivity -7.3dBm average power demonstrated 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening bit-error-rate 10(-12). operates error-free (bit-error-rate < 10(-12)) 40Gbps optimized supply settings demonstrating an energy efficiency 1.4pJ/bit 4pJ/bit 32Gbps 40Gbps, respectively, -0.8dBm.