Novel integration technique for silicon/III-V hybrid laser

• DOI: 10.1364/oe.22.026854
• Publication Date: 2014-10-21T19:43:28Z
• Authors: Po Dong; Ting-Chen Hu; Tsung-Yang Liow; Young-Kai Chen; Chongjin Xie; Xianshu Luo; Guo-Qiang Lo; Rose Kopf; Alaric Tate
• Keywords: Hybrid silicon laser; Laser linewidth; Waveguide

Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers typically realized in III-V waveguide structures, it is beneficial have an integration approach which allows flexible efficient coupling light between gain media waveguides. In this paper, we propose demonstrate a novel fabrication technique associated transition structure realize without constraints other critical processing parameters such as starting layer thicknesses. This employs epitaxial growth pre-defined trench with taper structures. We fabricate long-cavity hybrid laser narrow linewidth 130 kHz output power 1.5 mW using proposed technique.