Interplay of carriers and deep-level recombination centers of 275-nm light-emitting diodes — Analysis on the parasitic peaks over wide ranges of temperature and injection density

• DOI: 10.1364/oe.27.0a1060
• Publication Date: 2019-07-10T18:18:27Z
• Authors: Tingzhu Wu; Yue Lin; Zhangbao Peng; Huashan Chen; Zhibin Shangguan; Meng Liu; Sung-Wen Huang Chen; Chih-Hao Lin; Hao-Chung Kuo; Zhong Chen
• Keywords: Ultraviolet

The low luminance efficiency, poor reliability and parasitic peaks have greatly limited the commercialization of deep ultraviolet (DUV) light-emitting diodes. Tasks identifying culprits these deficits are paramount importance but remains unaccomplished. We employ full-range temperature (20 K -300 K) measurement on 275-nm DUV devices that subjected to a 15-hour current-stress aging. results suggest primary culprit fast luminous decay is proliferation non-radiative centers. origins two main identified. 310-nm peak considered solely come from deep-level radiative centers (DLRCs) only dwell in active region. Whereas, 400-nm proven be dual-sources. One related DLRCs region, which can observed at very currents; other emerging higher currents associated with similar kinds located p-region, excited when electrons overflow. This new discovery also demonstrates thorough investigation interplay among carriers various types defects should conducted basis taken under wide range, as well proper forward voltage. let quasi-Fermi level shift across defect levels, band-edge, over-band, whereby recombination sites exposed deficit, moderate saturated electron environment so their natures tested.