Surface plasmon enhanced GeSn photodetectors operating at 2 µm

• DOI: 10.1364/oe.420543
• Publication Date: 2021-02-26T01:30:12Z
• Authors: Hao Zhou; Lin Zhang; Jinchao Tong; Shaoteng Wu; Bongkwon Son; Qimiao Chen; Dao Hua Zhang; Chuan Seng Tan
• Keywords: Germanium; :Electrical and electronic engineering::Semiconductors [Engineering]; 0103 physical sciences; 02 engineering and technology; Photodetector; 0210 nano-technology; 01 natural sciences

Au-hole array and Au-GeSn grating structures were designed incorporated in GeSn metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm. Both plasmonic are beneficial effective optical confinement near the surface due to plasmon resonance (SPR), contributing an responsivity. The responsivity enhancement Au hole-array structure is insensitive polarization direction, while depends on direction. photodetector with has ∼50% reinforcement compared reference photodetector. On other hand, benefits a 3× of 0.455 A/W 1.5V under TM-polarized illumination. achieved among highest values operating this work offer alternative solution high-efficiency detection, manifesting their great potentials as candidates µm communication emerging applications.