Large-area long-wave infrared broadband all-dielectric metasurface absorber based on maskless laser direct writing lithography

• DOI: 10.1364/oe.447783
• Publication Date: 2022-04-01T11:00:19Z
• Authors: Cheng Chen; Yanhua Liu; Zhou-ying Jiang; Chong Shen; Ye Zhang; Fan Zhong; Linsen Chen; Shining Zhu; Hui Liu
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

Scalable and low-cost manufacturing of broadband absorbers for use in the long-wave infrared region are enormous importance various applications, such as thermal imaging, radiative cooling, photovoltaics sensor. In recent years, a plethora absorption metasurfaces made metal nano-resonators with plasmon resonance have been synthesized. Still, their disadvantages terms complex structure, production equipment, fabrication throughput, limit future commercial applications. Here, we propose experimentally demonstrate large-area all-dielectric metasurface absorber comprised silicon (Si) arrys square resonators nitride (Si3N4) film region. The multiple Mie modes generated single-size Si resonator utilized to enhance Si3N4 achieve absorption. At same time, transversal optical (TO) phonon resonator's magnetic dipole coupled size-insensitive peak. prepared by using maskless laser direct writing technology displays an average 90.36% peak 97.55% 8 14 µm, still maintains 88.27% at inciedent angle 40°. 2 cm × 3 patterned markless lithography (MLDWL) exhibits spatially selective imaging sample shows that maximum temperature difference 17.3 °C can exist boundary.