Simultaneous enhancement of the bandwidth and responsivity in high-speed avalanche photodiodes with an optimized flip-chip bonding package

• DOI: 10.1364/oe.494510
• Publication Date: 2023-07-18T13:00:18Z
• Authors: Naseem; Nan-Wei Chen; Syed Hasan Parvez; Zohauddin Ahmad; Sean Yang; H-S Chen; Hsiang-Szu Chang; Jack Jia-Sheng Huang; Jin-Wei Shi
• Keywords: APDS; Photodiode; Wire bonding; Optical power

The enhancement in responsivity of photodiodes (PDs) or avalanche (APDs) with the traditional flip-chip bonding package usually comes at expense degradation optical-to-electrical (O-E) bandwidth due to increase parasitic capacitance. In this work, we demonstrate backside-illuminated In0.52Al0.48As based APDs novel packaging designed relax fundamental trade-off. inductance induced peak measured O-E frequency response these well-designed and well-packaged APDs, which can be observed around its 3-dB (∼30 GHz), effectively widens becomes more pronounced when active diameter APD is aggressively downscaled as small 3 µm. With a typical window 14 µm, large enough for alignment tolerance low optical coupling loss, packaged exhibits moderate damping (36 vs. 31 GHz) (3.4 2.3 A/W) superior those top-illuminated reference sample under 0.9 Vbr operation, attain high millimeter wave output power (0 dBm 40 current (12.5 mA +8.8 power). excellent static dynamic performance design open up new possibilities further improve sensitivity receiver-end next-generation passive network (PON) coherent communication systems.