Robust design of mid-infrared GaSb-based single-mode laser diode fabricated by standard photolithography with socketed ridge-waveguide modulation

• DOI: 10.1364/oe.498962
• Publication Date: 2023-09-14T14:09:01Z
• Authors: Hongguang Yu; Chengao Yang; Yihang Chen; Tianfang Wang; Jianmei Shi; Yu Zhang; Donghai Wu; Yingqiang Xu; Haiqiao Ni; Zhichuan Niu
• Keywords: Waveguide; Laser diode

In this paper, we put up a robust design of stable single-mode-operated GaSb-based laser diode emitting around 1950nm. This novel structure with socketed ridge-waveguide enables simple fabrication and batch production mid-infrared diodes on account the mere usage standard photolithography. By introducing micron-level index perturbations distributed along ridge waveguide, threshold gains different FP modes are modulated. Four geometrical parameters systematically optimized by analyzing reflection spectrum to get single-mode characteristic. Based parameters, 1-mm long uncoated lasers carried out exhibit single longitudinal mode from 10 °C 40 maximum output power more than mW. Thus, prove feasibility photolithography manufacture monolithic infrared source without regrowth process or nanoscale lithography.