Hybrid 3C-silicon carbide-lithium niobate integrated photonic platform

Integrated Optics
DOI: 10.1364/oe.517840 Publication Date: 2024-03-11T08:00:44Z
ABSTRACT
In this paper, we demonstrate a novel hybrid 3C-silicon carbide-lithium niobate (3C-SiC-LN) platform for passive and active integrated nanophotonic devices enabled through wafer bonding. These are fabricated by etching the SiC layer, with optical mode power distributed between LN layers taper design. We present racetrack resonator-based electro-optic (EO) phase shifter where resonator is in while using EO-effect (r 33 ≈ 27 pm/V). The proposed demonstrates efficient resonance wavelength tuning low voltage-length product (V π .L 2.18 V cm) EO effect of LN. This SiC-LN would enable high-speed, low-power, miniaturized photonic (e.g., modulators, switches, filters) operable over broad range wavelengths (visible to infrared) applications both classical quantum nanophotonics.
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