Integrated silicon nitride electro-optic modulators with atomic layer deposited overlays

• DOI: 10.1364/ol.44.001112
• Publication Date: 2019-02-15T14:59:54Z
• Authors: Artur Hermans; Michiel Van Daele; Jolien Dendooven; Stéphane Clemmen; Christophe Detave...; Roel Baets
• Keywords: Integrated Optics

Silicon nitride (SiN) is currently the most prominent CMOS-compatible platform for photonics at wavelengths <1 μm. However, realizing fast electro-optic (EO) modulators, key components of any integrated optics platform, remains challenging in SiN. Modulators based on plasma dispersion effect, as silicon, are not available. Despite fact that significant second-harmonic generation has been reported silicon-rich SiN, no efficient Pockels effect-based modulators have demonstrated. Here we report back-end atomic layer deposition (ALD) conventional second-order nonlinear crystals, zinc oxide, and sulfide, existing SiN waveguide circuits. Using these ALD overlays, demonstrate EO modulation ring resonators.