Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection

• DOI: 10.1364/ol.447636
• Publication Date: 2022-01-11T16:31:54Z
• Authors: Stijn Cuyvers; Artur Hermans; Max Kiewiet; Jeroen Goyvaerts; Gunther Roelkens; Kasper Van Gasse; Dries Van Thourhout; Bart Kuyken
• Keywords: Photodiode

Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused telecommunication wavelengths. Yet, unlock full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential serve applications such as biosensing, imaging, quantum photonics. Here, we report first, best our knowledge, microtransfer printed Si p-i-n photodiodes a commercially available platform target <850 nm. A novel heterogeneous integration process flow was developed offer high printing yield. Moreover, these devices fabricated with CMOS compatible wafer-scale technology.