Topological corner states in a silicon nitride photonic crystal membrane with a large bandgap

• DOI: 10.1364/ol.511166
• Publication Date: 2023-12-12T18:00:22Z
• Authors: Yiying Liu; Xing Hong; Shouqi Zhang; Jixin Li; Song Han; Jin Tao; Yongquan Zeng
• Keywords: 0301 basic medicine; 0303 health sciences

The theory of band topology has inspired the discovery various topologically protected states in regime photonics. It led to development topological photonic devices with robust property and versatile functionalities, like unidirectional waveguides, compact power splitters, high-Q resonators, lasers. These mainly rely on on-chip crystal (PhC) Si or III-V compound materials a fairly large bandgap. However, designs have rarely been applied ultra-low-loss silicon nitride (SiN) platform which is widely used photonics for important integrated circuits. hindered by relatively low refractive index. In this work, we revealed that rhombic PhC can open bandgap SiN slab, thus support corner stemming from quantization dipole moments. Meanwhile, propose inclination angle lattice, as new degree freedom, manipulate characteristics states. Our work shows possibility further expand protection design flexibility devices.