Low-temperature germanium thin films on silicon

• DOI: 10.1364/ome.1.000856
• Publication Date: 2011-09-01T20:10:04Z
• Authors: Vito Sorianello; Lorenzo Colace; Nicola Armani; Francesca Rossi; Claudio Ferrari; Laura Lazzarini; Gaetano Assanto
• Keywords: X-RAY-DIFFRACTION; GROWTH; SI; GE FILMS; CHEMICAL-VAPOR

We discuss thermal evaporation of Germanium thin films as a suitable route to realizing near-infrared detectors integrated on Silicon platform. study the structural properties samples grown at various substrate temperatures by X-ray diffraction and transmission electron microscopy, showing that Ge are amorphous when deposited below 225°C, mono-crystalline between 225 400°C, poly-crystalline above 450°C. further investigate their optical electrical using differential absorption spectroscopy, Hall photocurrent measurements. Finally, with evaporated we demonstrate photodiodes low dark current density good responsivity 1.55 μm.