Enhanced photocurrent of a nitride–based photodetector with InN dot-like structures

• DOI: 10.1364/ome.4.002565
• Publication Date: 2014-11-17T16:28:22Z
• Authors: Lung-Hsing Hsu; Chien-Chung Lin; Hau-Vei Han; Da-Wei Lin; Yen-Hua Lo; Yi-Chia Hwang; Hao-Chung Kuo
• Keywords: Photocurrent; Indium nitride

The InN dot-like layer was applied in the gallium nitride based material for purpose of infrared photodetectors (PDs). This grown by a low-pressure metal organic chemical vapor deposition technology under different growth temperatures. X-ray diffraction patterns provide information crystal structure and hexagonal orientation detected. Raman shifts photoluminescence were also used to characterize quality film. Finally, fabricated Schottky-type photodetector tested solar simulator long-wavelength laser (λ = 1550nm). measurements show highly linear relation between photo-generated currents powers wavelength 1550 nm. In photonic detection range suitable optical fiber communiation, quantum efficiency 9.2% can be observed.