Compressive and tensile strain effects on the ultrafast carrier dynamics and transport of gallium arsenide thin films on silicon and magnesium oxide substrates

• DOI: 10.1364/ome.474151
• Publication Date: 2022-11-17T16:00:10Z
• Authors: Gerald Angelo R. ...; Hannah R. Bardolaza; John Daniel E. Va...; Rommel J. Jagus; Kerphy Liandro M....; Karl Cedric P. Go...; Elizabeth Ann P. ...; Armando S. Somintac; Elmer S. Estacio; Alexander E. De L...; Arnel A. Salvador
• Keywords: Silicon; Silicon Photonics Technology; Oxide; Gallium; 01 natural sciences; Atomic and Molecular Physics, and Optics; Materials science; Engineering; Gallium arsenide; Physics and Astronomy; Physical Sciences; Metallurgy; 0103 physical sciences; FOS: Electrical engineering, electronic engineering, information engineering; Materials Characterization; Electrical and Electronic Engineering; Optoelectronics; Terahertz Technology and Applications; Photoluminescence; Quantum Dot Devices and Semiconductors

We investigate strain effects on the ultrafast carrier dynamics and transport of gallium arsenide films on silicon (GaAs/Si) and magnesium oxide (GaAs/MgO) substrates using temperature-dependent photoluminescence (PL) and terahertz time-domain spectroscopy (THz-TDS) from 11 K - 300 K. The PL shows that GaAs/Si and GaAs/MgO samples are under tensile and compressive strain at low temperature, respectively. The temperature-dependent THz emission from GaAs/Si does not show significant differences with the emission from bulk GaAs, while the THz emission from GaAs/MgO shows an order-of-magnitude decrease at low temperature. The THz emission from the samples exhibits an interplay between strain-induced effective mass changes and temperature-dependent electric field effects.