InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55 µm lasers

• DOI: 10.1364/ome.521709
• Publication Date: 2024-03-13T16:00:11Z
• Authors: Bin Wang; Xuezhe Yu; Yugang Zeng; Weijie Gao; Wei Chen; Haoyu Shen; Kedi Ma; Hongxiao Li; Zizhuo Liu; Hui Su; Li Qin; Yongqiang Ning; Lijun Wang
• Keywords: Laser linewidth; Saturation (graph theory)

Uniform quantum dots (QDs) with a narrowed linewidth of photoluminescence (PL) are crucial for developing high-performance QD lasers. This study focuses on optimizing the growth conditions InAs QDs (001) InP substrates using metal-organic chemical vapor deposition (MOCVD), targeting applications in 1.55 µm By fine-tuning parameters such as V/III ratio, thickness, and temperature, we attained density 4.13 × 10 cm −2 . Further, PL full width at half maximum (FWHM) 40.1 meV was achieved five-stack layer. accomplished double-cap technique, which reduced height dispersion shifted emission wavelength to 1577 nm. Broad-area lasers incorporating optimized InAs/InAlGaAs structure demonstrated low threshold current 80 A/cm 2 per layer, saturation power 163 mW continuous-wave (CW) mode room temperature.