Effect of high temperature rapid thermal annealing on optical properties of InGaAsP grown by molecular beam epitaxy

• DOI: 10.1364/ome.7.003826
• Publication Date: 2017-10-03T15:46:33Z
• Authors: Meng Xiao; Guifeng Chen; Runqing Yang; Wenxian Yang; Lian Ji; Zhengbing Yuan; Pan Dai; Ming Tan; Yuanyuan Wu; Xuefei Li; Shulong Lu
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

The effect of rapid thermal annealing (RTA) on the optical properties InGaAsP with band-gap energy around 1.05 eV for quadruple-junction solar cells grown by molecular beam epitaxy (MBE) has been investigated. photoluminescence (PL) spectrum film annealed at 800 °C strong integrated intensity and low activation band-tail states. time-resolved PL measurement shows that decay time as-grown one are 11.6 ns 3.0 10 K, respectively. An S-shape as a function temperature is observed explained carrier relaxation dynamics. RTA process induces reorganization In Ga inside alloy due to existence miscibility gap in MBE owing Be diffusion high results an increased composition uniformity improved intensity.