Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

• DOI: 10.1364/ome.7.004214
• Publication Date: 2017-11-02T15:11:50Z
• Authors: Davide Priante; Bilal Janjua; Aditya Prabaswara; Ram Chandra Subedi; Rami T. Elafandy; Sergei Lopatin; Dalaver H. Anjum; Chao Zhao; Tien Khee Ng; Boon S. Ooi
• Keywords: 02 engineering and technology; 0210 nano-technology

In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs).By incorporating 20 TaN interlayer between Ti preorienting layer and the silicon substrate, eliminated potential barrier for carrier injection phonon transport, inhibited formation interfacial silicide that led to device failure.Compared previous reports metal achieved 16 × reduction in root-mean-square (RMS) roughness, from 24 1.6 nm, samples with Ti/TaN metal-bilayer, owing effective diffusion characteristic TaN.This was confirmed using energy dispersive X-ray spectroscopy (EDXS) electron loss (EELS).We considerable increase current density (up 90 A/cm 2 ) compared our studies, an optical power 1.9 μW 0.5 mm NWs-LED.This work provides feasible pathway both reliable stable UV-A operation elevated injection, eventually towards low-cost production UV devices, leveraging scalability substrates.