Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga_2O_3

• DOI: 10.1364/ome.8.000088
• Publication Date: 2017-12-19T15:48:39Z
• Authors: Kashif M. Awan; Mufasila M. Muhammad; Madhavi Sivan; Spencer Bonca; Iman S. Roqan; Ksenia Dolgaleva
• Keywords: Wurtzite crystal structure; Wide-bandgap semiconductor; Waveguide

Gallium nitride (GaN), a wide-bandgap III-V semiconductor material with bandgap wavelength λ g = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has large number of applications for photonics optoelectronics.However, optical quality this suffers from growth imperfections due to lack suitable substrate.Recent studies have shown that GaN grown on (-201) β -Ga 2 O 3 (gallium oxide) better lattice matching hence superior as compared traditionally Al (sapphire).In work, we report fabrication waveguides Ga substrate, followed by wet-etch process aimed at reduction waveguide surface roughness improvement side-wall verticality in these waveguides.The propagation loss resulting been experimentally determined be 7.5 dB/cm.