40 Gbps heterostructure germanium avalanche photo receiver on a silicon chip

• DOI: 10.1364/optica.393537
• Publication Date: 2020-06-08T16:30:10Z
• Authors: Daniel Benedikovic; Léopold Virot; Guy Aubin; Jean-Michel Hartmann; Farah Amar; Xavier Le Roux; Carlos Alonso-Ramos; Eric Cassan; Delphine Marris-M...; Paul Crozat; Frédéric Boeuf; Jean-Marc Fédéli; Christophe Kopp; Bertrand Szelag; Laurent Vivien
• Keywords: Silicon chip

Photodetectors are cornerstone components in integrated optical circuits and essential for applications underlying modern science engineering. Structures harnessing conventional crystalline materials typically at the heart of such devices. In particular, group-IV semiconductors as silicon germanium open up more possibilities high-performing on-chip photodetection thanks to their favorable electrical properties near-infrared wavelengths processing compatibility with chip manufacturing. However, scaling performance silicon-germanium photodetectors technologically relevant levels benefiting from improved speed, reduced driving bias, enhanced sensitivity, lowered power consumption arguably remains key densely photonic links mainstream shortwave infrared communications. Here we report on a reliable 40 Gbps direct detection chip-integrated avalanche p-i-n photo receiver driven low-bias supplies 1.55 µm wavelength. The scheme calls upon fabrication steps commonly used complementary metal-oxide-semiconductor foundries, alleviating need complex epitaxial wafer structures and/or multiple ion implantation schemes. exhibits an internal multiplication gain 120, high gain-bandwidth product 210 GHz, low effective ionization coefficient <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>∼</mml:mo> </mml:mrow> <mml:mn>0.25</mml:mn> </mml:math> . Robust stable on–off keying modulation is achieved input powers, without any electronic stages. Simultaneously, compact submicrometric heterostructures promote error-free operation transmission bit rates 32 Gbps, sensitivities <mml:mo>−</mml:mo> <mml:mn>12.8</mml:mn> <mml:mspace width="thickmathspace"/> <mml:mi mathvariant="normal">d</mml:mi> mathvariant="normal">B</mml:mi> mathvariant="normal">m</mml:mi> <mml:mn>11.2</mml:mn> , respectively (for <mml:msup> <mml:mn>10</mml:mn> <mml:mn>9</mml:mn> </mml:msup> error rate correction coding during use). Such photodetector significant step toward large-scale optoelectronic systems. These achievements promising use data center networks, interconnects, or quantum information technologies.