Cryogenic operation of silicon photonic modulators based on the DC Kerr effect
Modulation (music)
DOI:
10.1364/optica.403178
Publication Date:
2020-09-15T01:00:08Z
AUTHORS (8)
ABSTRACT
Reliable operation of photonic integrated circuits at cryogenic temperatures would enable new capabilities for emerging computing platforms, such as quantum technologies and low-power computing. The silicon-on-insulator platform is a highly promising approach to developing large-scale due its exceptional manufacturability, CMOS compatibility, high component density. Fast, efficient, low-loss modulation in silicon, however, remains an outstanding challenge, particularly without the addition exotic nonlinear optical materials. In this paper, we demonstrate DC-Kerr-effect-based temperature 5 K GHz speeds, silicon device fabricated exclusively within CMOS-compatible process. This work opens up path integration DC Kerr modulators classical applications.
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