Baseline 1300 nm dilute nitride VCSELs

• DOI: 10.1364/osac.396242
• Publication Date: 2020-06-23T17:00:42Z
• Authors: M. Gębski; D. Dontsova; N. Haghighi; K. Nunna; R. Yanka; A. Johnson; R. Pelzel; J. A. Lott
• Keywords: Vertical-cavity surface-emitting laser

Dilute nitride (DN) vertical cavity surface emitting lasers (VCSELs) near 1300 nm exhibit state-of-the-art performance including bandwidths of 10 GHz and a record high error-free data transmission 12 Gbps. Renewed interest in DN VCSELs stems from emerging applications kilometer-reach digital communication across optical fiber free space via eye safe beams, time-of-flight structured light sensing, photonic-electronic integrated circuit interconnects. We produce VCSEL wafers production molecular beam epitaxy system on 3- 4-inch diameter GaAs wafers. report dynamic for our test with oxide aperture diameters ranging 2 to µm.