High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD

• DOI: 10.1364/prj.424528
• Publication Date: 2021-06-28T20:31:25Z
• Authors: Yaozheng Wu; Bin Liu; Feifan Xu; Yimeng Sang; Tao Tao; Zili Xie; Ke Wang; Xiangqian Xiu; Peng Chen; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng
• Keywords: 0103 physical sciences; 01 natural sciences

We fabricated p-i-n tunnel junction (TJ) contacts for hole injection on c -plane green micro-light-emitting diodes (micro-LEDs) by a hybrid growth approach using plasma-assisted molecular beam epitaxy (PA-MBE) and metal–organic chemical vapor deposition (MOCVD). The TJ was formed an MBE-grown ultra-thin unintentionally doped InGaN polarization layer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:msup> <mml:mi mathvariant="normal">n</mml:mi> </mml:mrow> <mml:mo>++</mml:mo> </mml:msup> <mml:mo>/</mml:mo> <mml:mo>+</mml:mo> <mml:mtext>-</mml:mtext> <mml:mi>GaN</mml:mi> </mml:math> the activated id="m2"> mathvariant="normal">p</mml:mi> prepared MOCVD. This allowed realization of steep doping interface ultrathin depletion width efficient inter-band tunneling. Compared to standard micro-LEDs, micro-LEDs showed reduced device resistance, enhanced electroluminescence intensity, efficiency droop. size-independent J-V characteristics indicate that could serve as excellent current spreading layer. All these results demonstrated contributed high-performance with long emission wavelengths.