Bifunctional ultraviolet light-emitting/detecting device based on a SnO2 microwire/p-GaN heterojunction

• DOI: 10.1364/prj.441999
• Publication Date: 2021-10-19T21:01:09Z
• Authors: Tong Xu; Mingming Jiang; Peng Wan; Kai Tang; Daning Shi; Caixia Kan
• Keywords: 01 natural sciences; 7. Clean energy; 0104 chemical sciences

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:msub> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mn>2</mml:mn> </mml:msub> </mml:math> has attracted considerable attention due to its wide bandgap, large exciton binding energy, and outstanding electrical optoelectronic features. Owing the lack of reliable reproducible p-type id="m2"> , many challenges on developing id="m3"> -based devices their practical applications still remain. Herein, single-crystal id="m4"> microwires (MWs) are acquired via self-catalyzed approach. As a strategic alternative, id="m5"> <mml:mi mathvariant="normal">n</mml:mi> <mml:mtext>-</mml:mtext> MW/p-GaN heterojunction was constructed, which exhibited selectable dual-functionalities light-emitting photodetection when operated by applying an appropriate voltage. The device illustrated distinct near-ultraviolet light-emission peaking at id="m6"> <mml:mo form="prefix">∼</mml:mo> <mml:mn>395.0</mml:mn> <mml:mtext> </mml:mtext> <mml:mi>nm</mml:mi> linewidth id="m7"> <mml:mn>50</mml:mn> . Significantly, characteristics, in terms main peak positions linewidth, nearly invariant as functions various injection current, suggesting that quantum-confined Stark effect is essentially absent. Meanwhile, identical id="m8"> can also achieve photovoltaic-type light detection. steadily feature ultraviolet photodetecting ability, including ultraviolet/visible rejection ratio ( id="m9"> <mml:mi>R</mml:mi> <mml:mn>360</mml:mn> <mml:mo>/</mml:mo> <mml:mn>400</mml:mn> ) id="m10"> <mml:mn>1.5</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mn>10</mml:mn> <mml:mn>3</mml:mn> </mml:msup> high photodark current id="m11"> <mml:mn>5</mml:mn> fast response speed 9.2/51 ms, maximum responsivity 1.5 A/W, detectivity id="m12"> <mml:mn>1.3</mml:mn> <mml:mn>13</mml:mn> Jones under 360 nm id="m13"> form="prefix">−</mml:mo> mathvariant="normal">V</mml:mi> bias. Therefore, bifunctional not only displays emission, but ability high-sensitive photodetection. novel design id="m14"> systems expected open doors application id="m15"> microstructures/nanostructures for large-scale miniaturization, integration multifunction next-generation high-performance photoelectronic devices.