Mechanisms of enhanced sub-bandgap absorption in high-speed all-silicon avalanche photodiodes

• DOI: 10.1364/prj.475384
• Publication Date: 2022-12-23T21:00:10Z
• Authors: Yuan Yuan; Wayne V. Sorin; Di Liang; Stanley Cheung; Yiwei Peng; Mudit Jain; Zhihong Huang; Marco Fiorentino; Raymond G. Beauso...
• Keywords: Photodiode

All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity enhancement effect, many of these shown considerably high responsivity at telecommunication wavelengths such as 1310 nm, yet mechanisms for remain unexplained. In this work, an all-Si microring is studied systematically photodiode unfold various absorption mechanisms. At <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:mo form="prefix">−</mml:mo> <mml:mn>6.4</mml:mn> <mml:mtext> </mml:mtext> <mml:mi mathvariant="normal">V</mml:mi> </mml:mrow> </mml:math> , exhibits up id="m2"> form="prefix">∼</mml:mo> <mml:mn>0.53</mml:mn> mathvariant="normal">A</mml:mi> <mml:mo>/</mml:mo> mathvariant="normal">W</mml:mi> avalanche gain, 3 dB bandwidth id="m3"> <mml:mn>25.5</mml:mn> <mml:mi>GHz</mml:mi> open-eye diagrams 100 Gb/s. The measured results reveal hybrid inside device. A comprehensive model reported describe its working principle, which can guide future designs make promising building block in Si