Structure and Optical Properties of CdTe and CdS Thin Films after Hard Ultraviolet Irradiation

• DOI: 10.15330/pcss.20.2.165-170
• Publication Date: 2019-07-09T16:18:19Z
• Authors: G.I. Kopach; A.I. Dobrozhan; G.S. Khrypunov; R.P. Mygushchenko; О.Y. Kropachek; R.V. Zaitsev; A.V. Meriuts
• Keywords: Cadmium telluride photovoltaics; Ultraviolet; Cadmium sulfide; Recrystallization (geology)

The influence of hard ultraviolet radiation on the crystalline structure, surface morphology and optical characteristics CdS CdTe semiconductor layers obtained by direct current magnetron sputtering are investigated. It was established that studied films insensitive to irradiation. structure is changed after period lattice for cadmium sulfide increases from c = 6.77(01) Å 6.78(88) Å, which may be due formation point defects defective complexes. Decrease integral FWHM peaks X-ray diffraction patterns observed, increase coherent scattering regions as a result in process near-surface partial recrystallization investigated films.