A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

Ionizing radiation Gamma ray Nuclear physics 03 medical and health sciences Engineering 0302 clinical medicine Dosimetry FOS: Electrical engineering, electronic engineering, information engineering Absorbed dose Electrical and Electronic Engineering Optoelectronics Diode Radiation Detection Radiation Radiochemistry Physics Optics Materials science Scintillation Detector Technology Chemistry Fault Tolerance in Electronic Systems Physics and Astronomy Dosimeter Atomic Layer Deposition Technology Physical Sciences Nuclear medicine Medicine Irradiation
DOI: 10.15392/bjrs.v7i2a.681 Publication Date: 2019-04-25T12:34:55Z
ABSTRACT
In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate direct current mode, as on-line dosimeter. irradiation of samples was performed using a 60Co source dose rate almost 2.4 kGy/h. response each diode measured function exposure time steps from 5 kGy up 50 achieve total absorbed 275 kGy. range it is observed significant decrease photocurrent generated both devices due gamma defects produced their active volumes. To mitigate effect, pre-irradiated Co-60 rays at 700 Despite being less sensitive, these presented stable reproducible signals relative sensitivity about 19% within whole studied. dose-response curves showed quadratic behavior correlation coefficient higher than 0.9999 for comparison FZ DOFZ responses evidenced that latter slightly superior first. However, important note all can be used dosimeters applications.
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