A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

• DOI: 10.15392/bjrs.v7i2a.681
• Publication Date: 2019-04-25T12:34:55Z
• Authors: Fábio Camargo; Carmen Cecília Bueno; Josemary A. C. Go...
• Keywords: Ionizing radiation; Gamma ray; Nuclear physics; 03 medical and health sciences; Engineering; 0302 clinical medicine; Dosimetry; FOS: Electrical engineering, electronic engineering, information engineering; Absorbed dose; Electrical and Electronic Engineering; Optoelectronics; Diode; Radiation Detection; Radiation; Radiochemistry; Physics; Optics; Materials science; Scintillation Detector Technology; Chemistry; Fault Tolerance in Electronic Systems; Physics and Astronomy; Dosimeter; Atomic Layer Deposition Technology; Physical Sciences; Nuclear medicine; Medicine; Irradiation

In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate direct current mode, as on-line dosimeter. irradiation of samples was performed using a 60Co source dose rate almost 2.4 kGy/h. response each diode measured function exposure time steps from 5 kGy up 50 achieve total absorbed 275 kGy. range it is observed significant decrease photocurrent generated both devices due gamma defects produced their active volumes. To mitigate effect, pre-irradiated Co-60 rays at 700 Despite being less sensitive, these presented stable reproducible signals relative sensitivity about 19% within whole studied. dose-response curves showed quadratic behavior correlation coefficient higher than 0.9999 for comparison FZ DOFZ responses evidenced that latter slightly superior first. However, important note all can be used dosimeters applications.