A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing
Ionizing radiation
Gamma ray
Nuclear physics
03 medical and health sciences
Engineering
0302 clinical medicine
Dosimetry
FOS: Electrical engineering, electronic engineering, information engineering
Absorbed dose
Electrical and Electronic Engineering
Optoelectronics
Diode
Radiation Detection
Radiation
Radiochemistry
Physics
Optics
Materials science
Scintillation Detector Technology
Chemistry
Fault Tolerance in Electronic Systems
Physics and Astronomy
Dosimeter
Atomic Layer Deposition Technology
Physical Sciences
Nuclear medicine
Medicine
Irradiation
DOI:
10.15392/bjrs.v7i2a.681
Publication Date:
2019-04-25T12:34:55Z
AUTHORS (3)
ABSTRACT
In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate direct current mode, as on-line dosimeter. irradiation of samples was performed using a 60Co source dose rate almost 2.4 kGy/h. response each diode measured function exposure time steps from 5 kGy up 50 achieve total absorbed 275 kGy. range it is observed significant decrease photocurrent generated both devices due gamma defects produced their active volumes. To mitigate effect, pre-irradiated Co-60 rays at 700 Despite being less sensitive, these presented stable reproducible signals relative sensitivity about 19% within whole studied. dose-response curves showed quadratic behavior correlation coefficient higher than 0.9999 for comparison FZ DOFZ responses evidenced that latter slightly superior first. However, important note all can be used dosimeters applications.
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