Fabrication of PbS QD/Silicon Hybrid Infrared Photodiode for LSI Platform

• DOI: 10.1541/ieejsmas.138.307
• Publication Date: 2018-06-30T18:27:44Z
• Authors: Akio Higo; Yoshio Mita; Haibin Wang; Takaya Kubo; Hiroshi Segawa; Naoto Usami; Yuki Okamoto; Kentaro Yamada; Yudai Takeshiro; Masakazu Sugiyama
• Keywords: Photodiode

Near-infrared detectors by silicon based devices with large scale integration are very attractive for secure applications about image sensors. Beyond the bandgap, we focus on PbS colloidal quantum dots (CQDs) and integration. In this paper, investigated fabrication processes of CQDs hybrid IR detector. Temperature dependent photoluminescence thin films measured found bandgap do not change various temperature. Optical response a spectrometer were observed in 1550 nm range.