SiC Power Electronic Devices, MOSFETs and Rectifiers

• DOI: 10.1557/proc-572-3
• Publication Date: 2011-04-05T17:33:14Z
• Authors: J. A. Cooper; S-H. Ryu; Y. LI; M. Matin; J. Spitz; D. T. Morisesette; H. M. McGlothlin; M. K. Das; M. R. Melloch; M. A. Capano; J. M. Woodall
• Keywords: Figure of Merit; Power MOSFET

ABSTRACTSiC power switching devices have demonstrated performance figures of merit far beyond the silicon theoretical limits, but much work remains before commercial production will be feasible. A significant fraction of the remaining work centers on materials science issues. This paper reviews the current status of unipolar power switching devices in SiC and identifies the major technological and material science barriers that need to be overcome.