ALD Deposited Hydroxyl-Rich NiOx to Enhance SAM Anchoring for Stable and Efficient Perovskite Solar Cells

• DOI: 10.20944/preprints202502.1818.v1
• Publication Date: 2025-02-27T05:19:51Z
• Authors: Fengming Guo; Xuteng Yu; Yuheng Li; Yong Chen; Chi Li; Chunming Liu; Peng Gao
• Keywords: Anchoring

The interface between nickel oxide (NiOx) and self-assembled monolayers (SAMs) in perovskite solar cells (PSCs) often suffers from limited adsorption strength, poor energy-level alignment, inadequate defect passivation, which hinder device performance stability. To address these issues, we introduce a hybrid hole selective layer (HSL) combining atomic deposition (ALD)-fabricated NiOx with full-aromatic SAM molecules, creating highly stable efficient interface. ALD NiOx, enriched hydroxyl groups, provides robust sites for the molecule MeO-PhPACz, ensuring strong, interaction. This HSL enhances selectivity, passivation at NiOx/perovskite Devices utilizing this approach demonstrate significant improvements, achieving power conversion efficiency (PCE) of 21.74%, reduced voltage losses minimal hysteresis. Furthermore, operational stability tests reveal enhanced durability under elevated humidity temperature conditions. These findings highlight potential to overcome existing barriers, advancing commercial viability PSC technologies.